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  Datasheet File OCR Text:
 2N6802 IRFF430
MECHANICAL DATA Dimensions in mm (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
5.08 (0.200) typ.
BVDSS ID(cont) RDS(on)
2.54 (0.100)
500V 2.5 1.5
2 1
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
3
FEATURES
* AVALANCHE ENERGY RATED * HERMETICALLY SEALED
45
* DYNAMIC dv/dt RATING * SIMPLE DRIVE REQUIREMENTS
TO39 - Package (TO-205AF)
Underside View
Pin 1 - Source
Pin 2 - Gate
Pin 3 - Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
20V (VGS = 10V , Tcase = 25C) (VGS = 10V , Tcase = 100C) 2.5A 1.5A 11A 25W 0.2W/C 0.35mJ 3.5V/ns -55 to +150C 5.0C/W 175C/W
Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy 2 Peak Diode Recovery
3
Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction-to-Ambient
Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = 50V , Peak IL = 2.5A , Starting TJ = 25C 3) @ ISD 2.5A , di/dt 75A/s , VDD BVDSS , TJ 150C , SUGGESTED RG = 7.5
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5357 Issue: 1
2N6802 IRFF430
ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Notes Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
2
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS > 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDS ID = 2.5A ID =2.5A VDS = 0.5BVDS RG = 7.5 ID = 1.5A ID = 2.5A ID = 250A IDS = 1.5A VDS = 0.8BVDSS TJ = 125C ID = 1mA
Min.
500
Typ.
Max.
Unit
V
BVDSS Temperature Coefficient of
Reference to 25C
0.43 1.5 1.725 2 1.5 25 250 100 -100 610 135 65 19.8 2.2 5.5 29.5 4.6 19.7 30 30 55 30 2.5 4
V / C V S( A nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS
pF
nC
ns
IS = 2.5A IF = 1.5A IF = 2.5A
VGS = 0 TJ = 25C TJ = 25C Negligible
11 1.4 900 7.0
A V ns C
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
di / dt 100A/s VDD 50V
1) Pulse Test: Pulse Width 300s, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5357 Issue: 1


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